收藏本站
DMN65D8LFB
Maximum Ratings
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
60
± 20
Units
V
V
Continuous Drain Current (Note 4) V GS = 10V
Continuous Drain Current (Note 5) V GS = 10V
Steady
State
Steady
State
T A = 25°C
T A = 70°C
T A = 25°C
T A = 70°C
I D
I D
260
210
400
310
mA
mA
Thermal Characteristics
Characteristic
Power Dissipation, @T A = 25°C (Note 4)
Thermal Resistance, Junction to Ambient @T A = 25°C (Note 4)
Power Dissipation, @T A = 25°C (Note 5)
Thermal Resistance, Junction to Ambient @T A = 25°C (Note 5)
Operating and Storage Temperature Range
Symbol
P D
R θ JA
P D
R θ JSA
T J , T STG
Value
430
290
840
147
-55 to +150
Units
mW
° C/W
mW
° C/W
° C
Electrical Characteristics @T A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T J = 25°C
Gate-Body Leakage
BV DSS
I DSS
I GSS
60
-
-
-
-
-
-
0.1
± 10
V
μA
μA
V GS = 0V, I D = 250 μ A
V DS = 60V, V GS = 0V
V GS = ± 20V, V DS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
V GS(th)
R DS (ON)
|Y fs |
V SD
1.2
-
80
-
-
-
320
0.7
2.0
3.0
4.0
-
1.2
V
Ω
mS
V
V DS = V GS , I D = 250 μ A
V GS = 10V, I D = 0.115A
V GS = 5V, I D = 0.1115A
V DS = 10V, I D = 0.115A
V GS = 0V, I S = 0.115A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
C iss
-
25
-
pF
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
C oss
C rss
t D(on)
t r
t D(off)
t f
-
-
-
-
-
-
4.7
2.5
3.27
3.15
12.025
6.29
-
-
-
-
-
-
pF
pF
ns
ns
ns
ns
V DS = 25V, V GS = 0V, f = 1.0MHz
V DD = 30V, V GEN = 10V,
R GEN = 25 ? ,I D = 0.115A
Notes:
4. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.
5. Device mounted on 2” x 2” FR-4 PCB with high coverage 2 oz. Copper, single sided .
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to production testing.
DMN65D8LFB
Document number: DS35449 Rev. 2 - 2
2 of 5
www.diodes.com
November 2011
? Diodes Incorporated
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
DMN65D8LW-7 MOSFET N CH 60V 300MA SOT323
DMN66D0LDW-7 MOSFET N-CH DUAL 115MA SOT-363
DMN66D0LT-7 MOSFET N-CH 60V 115MA SOT-523
DMP1022UFDE-7 MOSF P CH 12V U-DFN2020-6 TYPE E
DMP1096UCB4-7 MOSFET P-CH 12V 2.6A 4-UFCSP
DMP1245UFCL-7 MOSFET P-CH 12V 6.6A 6-UFDFN
DMP2004DMK-7 MOSFET DUAL P-CH 20V SOT-26
DMP2004DWK-7 MOSFET DUAL P-CH 20V SOT-363
相关代理商/技术参数
DMN65D8LW 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE MOSFET
DMN65D8LW-7 功能描述:MOSFET MOSFET BVDSS: 61V-10 100V SOT323 T&R 3K RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMN66D0LDW 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN66D0LDW-7 功能描述:MOSFET 250mW 60Vdss RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMN66D0LT 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE MOSFET
DMN66D0LT-7 功能描述:MOSFET NMOS-Single RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMN66D0LW 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN66D0LW-7 功能描述:MOSFET NMOS-SINGLE RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube